Vortex® Silicon Drift Detectors X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex® detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn KΑ is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.